For the purpose of properly assessing the role of SiC MOSFET in the application of power converter, an accurate model of SiC MOSFET is necessary. In this paper, a SiC MOSFET model is proposed based on an advanced mobility model in Matlab/Simulink environment. For the powerful ability of solving equations and plenty of tool box in Matlab/Simulink, more complex physical effects can be incorporated into the model of SiC MOSFET. The accuracy of the model is validated with the production Datasheet and experimental results. Based on the developed model, the effect of SiC/SiO2 interface traps on the transient temperature of SiC MOSFET is discussed, and the comparison of temperature characteristics between SiC MOSFET and Si counterpart is carried out. Results show that SiC device exhibits very excellent temperature behaviors.