Monolayer brazed diamond wheel can be pre cisely dressed by the plate wheel dressing method. The contour of grits is imp roved and the quality of the ground surface is enhanced. In order to investigat e the influence of the dressing method on the material removal mechanism， a the oretical model about the influence of the dressing depth on the maximum undeform ed chip thickness is proposed. Besides， a monolayer brazed diamond wheel is dr essed through plate wheel dressing. During the dressing procedure， a serial of g rinding experiments are carried out on SiC ceramics. The material removal mecha nism of the ground surface on SiC ceramics is studied in terms of the morpholog ies of grits and the ground surfaces. The results show that the number of the dy namic effective grits on the diamond wheel is increased when dressing the monol ayer brazed diamond wheel with the plate wheel， leading to the decrease of the m axim um undeformed chip thickness. The material removal mode changes from brittle rup ture to plastic deformation. The ductile regime grinding of SiC ceramics is rea lized finally.