As a typical transparent conductive oxide (TCO) material，ZnO not only has similar optical and electrical properties with indium tin oxide (ITO)，but also has other advantages such as abundant in serves，friendly environment, easy preparation, and low cost, etc. Therefore it is the promising material to replace ITO. In this paper, the transparent conductive film of ZnO is prepared by the traditional hydrothermal method. In this process, the quantum dot seed layer is used as the buffer layer on the glass substrates. The effect of film growth parameters and ultraviolet vays (UV) irradiation treatment on the transmittance and conductivity of the film is explored. The results show that, after UV treatment, the electric resistivity of the ZnO nanostructure film is improved by three orders of magnitude, from 1.5×105 Ω/□ to 150 Ω/□, which provides a simple and efficient way to improve the conductivity of ZnO thin films, and other metal oxides.